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Samsung 990 EVO Plus, PCIe 4.0/5.0, NVMe M.2 SSD – Storage

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Product overview

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Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing. Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work. Available in different capacities up to 4TB. Power efficient design puts less burden on your PC's battery life. Smart thermal solution provides consistent and reliable performance. Five year limited warranty. Verified details include cache memory of HMB(Host Memory Buffer), storage memory of Samsung V-NAND TLC, capacity of 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise), average power consumption (system level) of Average: Read 5.5 W / Write 4.8 W* Actual power consumption may vary depending on system hardware & configuration, power consumption (device sleep) of Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration and power consumption (idle) of Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration.

Key features

  • Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing.
  • Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work.
  • Available in different capacities up to 4TB.
  • Power efficient design puts less burden on your PC's battery life.
  • Smart thermal solution provides consistent and reliable performance.
  • Cache Memory: HMB(Host Memory Buffer)
  • Storage Memory: Samsung V-NAND TLC
  • Capacity: 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications

Specifications

Full product details

Only verified supplier or manufacturer facts are shown. Variant-specific values remain tied to the option selected above.

Performance

Cache Memory
HMB(Host Memory Buffer)
Storage Memory
Samsung V-NAND TLC

Storage

Capacity
4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Battery and power

Average Power Consumption (system level)
Average: Read 5.5 W / Write 4.8 W* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (Device Sleep)
Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration
Power consumption (Idle)
Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration

Connectivity

Device Sleep Mode Support
Yes

Design

Weight
Max 9.0g Weight

Dimensions

Dimension (WxHxD)
Max 80.15 x Max 22.15 x Max 2.38 mm

Product details

Allowable Voltage
3.3 V ± 5 % Allowable voltage
Warranty
5-year Limited Warranty or 2400TBW Limited Warranty

Product information

Brand
Samsung
Condition
New
Department
Tech
Product type
Storage

Identifiers

Model number
MZ-V9S4T0BW

Listing identifiers

For Him reference
FH-P-681119548C95
Manufacturer part number
MZ-V9S4T0BW

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Delivery & returns

Complimentary UK delivery is available over £50. Eligible items can be returned within 30 days in their original, unworn condition.

04

Availability

In stock in at least one listed variation. Final availability is confirmed before payment.

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